Statistics of Strongly Coupled Defects in Superconducting Qubits

S. Weeden, D. C. Harrison, S. Patel, M. Snyder, E. J. Blackwell, G. Spahn, S. Abdullah, Y. Takeda, B. L. T. Plourde, J. M. Martinis, R. McDermott

Decoherence in superconducting qubits is dominated by defects that reside at amorphous interfaces. Interaction with discrete defects results in dropouts that complicate qubit operation and lead to nongaussian tails in the distribution of qubit energy relaxation timethat degrade system performance. Spectral diffusion of defects over time leads to fluctuations in, posing a challenge for calibration. In this work, we measure the energy relaxation of flux-tunable transmons over a range of operating frequencies. We vary qubit geometry to change the interface participation ratio by more than an order of magnitude. Our results are consistent with loss dominated by discrete interfacial defects. Moreover, we are able to localize the dominant defects to within 500 nm of the qubit junctions, where residues from liftoff are present. These results motivate new approaches to qubit junction fabrication that avoid the residues intrinsic to the liftoff process.